| PART |
Description |
Maker |
| K7S3218U4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R3236 |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7B321825M K7B323625M K7B323625M-QC6575 |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 22x50 mm; Packaging: Bulk
1Mx36 & 2Mx18 Synchronous SRAM
1Mx36 & 2Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R3218 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7D321874A K7D323674A |
1Mx36 & 2Mx18 SRAM
|
Samsung Electronics
|
| K7S3236T4C-FECI33 K7S3218T4C-FECI33 K7S3236T4C-FEC |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
| IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7R323682MK7R321882MK7R320882M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRII b2 SRAM Data Sheet
|
Samsung Electronic
|
| CY7C1543KV18-400BZC CY7C1545KV18-450BZXI |
Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
