| PART |
Description |
Maker |
| BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| LY62256SL LY62256SV LY62256RL LY62256 LY62256DL LY |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| UT62256BLS-35LL UT62256BLS-35L UT62256BLS-70L UT62 |
32K X 8 BIT LOW POWER (6T) CMOS SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| UT62256CPC |
32K X 8 BIT LOW POWER CMOS SRAM
|
UTRON
|
| GM76V256CLT GM76V256C GM76V256CE GM76V256CL GM76V2 |
32K x8 bit 3.3V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
| P4C1256L70SNILF P4C1256L55PILF P4C1256L70PCLF P4C1 |
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 55 ns, PDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, PDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, CDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 55 ns, PDSO28
|
Pyramid Semiconductor, Corp.
|
| AM27C256 AM27C256-120DC AM27C256-120DCB AM27C256-1 |
256 Kilobit (32 K x 8-Bit) CMOS EPRO
256 Kilobit (32 K x 8-Bit) CMOS EPROM
Quad 2-input positive-OR gates 14-PDIP 0 to 70
Quad 2-input positive-OR gates 14-SO 0 to 70
Universal shift / storage registers 20-PDIP 0 to 70
8-input positive-NAND gates 14-SO 0 to 70
Quad 2-input positive-OR gates 14-SOIC 0 to 70
Quad 2-input positive-OR gates 14-SSOP 0 to 70
8-Line To 3-Line Priority Encoder 16-SOIC 0 to 70 32K X 8 UVPROM, 70 ns, CDIP28
Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70 32K X 8 UVPROM, 90 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 45 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 120 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 200 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 70 ns, PDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 90 ns, PDIP28
Hex Bus Drivers With 3-State Outputs 16-PDIP 0 to 70 32K X 8 OTPROM, 90 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 120 ns, CDIP28
Quad 2-input positive-NOR buffers with open collector outputs 14-SOIC 0 to 70 32K X 8 UVPROM, 55 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 90 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 150 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 250 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 55 ns, PDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 70 ns, PQCC32
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Rochester Electronics, LLC
ADVANCED MICRO DEVICES INC
|
| GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M5M5256DFP-70G M5M5256DFP-70GI M5M5256DVP-70G M5M5 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| N256S0818HDA N256S0830HDA N256S08XXHDA N256S0818HD |
32K X 8 STANDARD SRAM, 25 ns, PDSO8
256Kb Low Power Serial SRAMs 32K 】 8 bit Organization
256Kb Low Power Serial SRAMs 32K × 8 bit Organization
|
AMI SEMICONDUCTOR
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| CAT25C32PSE-1.8TE13 CAT25C32VSI-1.8TE13 CAT25C32Y1 |
32K/64K-Bit SPI Serial CMOS EEPROM 32K/64K-Bit SPI串行EEPROM中的CMOS
|
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
BCD Semiconductor Manufacturing, Ltd.
|
