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MBM30LV0064 - 64M (8M X 8) BIT NAND-type

MBM30LV0064_20896.PDF Datasheet


 Full text search : 64M (8M X 8) BIT NAND-type


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MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR FLASH MEMORY 64M (8M x 8) BIT NAND-type
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TOSHIBA
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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SAMSUNG[Samsung semiconductor]
K9K1208U0A-VCIB0 64M x 8 Bit NAND Flash Memory Data Sheet
Samsung Electronic
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SAMSUNG SEMICONDUCTOR CO. LTD.
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
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1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
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Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
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Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
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SAMSUNG[Samsung semiconductor]
Samsung Electronic
HY27UF081G2A HY27UF161G2A-TPCS HY27UF161G2A-TPCB 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
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HYNIX SEMICONDUCTOR INC
 
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