| PART |
Description |
Maker |
| IBM0418A41BLAB |
(IBM04xxAx1BLAB) 8Mb and 4Mb SRAM
|
IBM Corporation
|
| M58LW064D110ZA6T M58LW064D M58LW064D110N1T M58LW06 |
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB7 |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory
|
ST Microelectronics
|
| M29W640DT M29W640DT90ZA6T M29W640DB M29W640DB70N1E |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W640FT60N6E M29W640FT60N6F M29W640FT60ZA6E M29W |
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M58LW064D 8938 |
64 MBIT(8MB X8, 4MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY
From old datasheet system
|
STMicroelectronics
|
| M29DW640F70N1 M29DW640F70N1E M29DW640F70N1F M29DW6 |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29DW640D70ZA1 M29DW640D70ZA1F M29DW640D70ZA1E M29 |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory 64兆位兆x8Mb的x16插槽，多行，页，引导块）3V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| IBM0418A81QLAB IBM0418A41QLAB |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM)
4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
|
IBM Microeletronics
|
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| GS840FH18AGT-8 GS840FH18AT-8.5 GS840FH18AT-8.5I GS |
4Mb Burst SRAMs
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
