PART |
Description |
Maker |
EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位,2个等级) 512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
HYS64V64220GU HYS72V64220GU |
3.3 V 64M 64-Bit SDRAM Modules(3.3 V 64M 64/72-Bit 2 个存储体SDRAM 模块) 3.3 V 64M 72-Bit SDRAM Modules(3.3 V 64M 64/72-Bit 2 个存储体SDRAM 模块)
|
SIEMENS AG
|
MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
H5PS1G63EFR-C4I H5PS1G63EFR-E3C H5PS1G63EFR-G7Q H5 |
1Gb DDR2 SDRAM 64M X 16 DDR DRAM, 0.35 ns, PBGA84 64M X 16 DDR DRAM, 0.4 ns, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
K9S1208V0M-SSB0 |
64M x 8 Bit SmartMedia Card 64M x 8 Bit SmartMedia?Card Data sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM MICA RoHS Compliant: No 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd. http://
|
M312L6523BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA |
64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 64M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 26615150 DDR SDRAM的注册模 DDR SDRAM Registered Module
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
MT18LSDT6472AIY-133XX MT18LSDT6472AG-133XX MT18LSD |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 LEAD FREE, DIMM-168 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
PD42S65405 PD4264405 |
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器(RAM400动态) 16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
|
NEC, Corp. NEC Corp.
|
UPD4564323G5-A10-9JH UPD4564323G5-A60-9JH UPD45643 |
64M-bit Synchronous DRAM 4-bank/ LVTTL 64M-bit Synchronous DRAM 4-bank, LVTTL 6400位同步DRAM 4银行,LVTTL
|
NEC Corp. NEC, Corp.
|
MBM29LV650UE-90 MBM29LV651UE90TR 29LV650 MBM29LV65 |
64M (4M x 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
HYB39S64400BT-7.5 HYB39S64800BT-7.5 HYB39S64800BT- |
64M SDRAM Component
|
Infineon
|