PART |
Description |
Maker |
BC-247R2D1 BC-0505S1 BC-0505S2 BC-0505S3 BC-XXXXDX |
1.5 to 3 W att Isolated DC-DC Converter Single / Dual Regulated Output
|
Bothhand USA, LP. http://
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TVA0600N06 TVA0600P06 TVA0400P06 |
THERMO COMPENSATING ATT 6DB 0 MHz - 6000 MHz RF/MICROWAVE FIXED ATTENUATOR
|
EMC Technology, Ltd. EMC TECHNOLOGY INC
|
UTV005 |
COMMON EMITTER transistor 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V
|
GHZTECH[GHz Technology]
|
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor 25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz BJT 2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology Microsemi, Corp.
|
2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor 2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp. GHZTECH[GHz Technology] ETC[ETC] Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
|
CMPSH-3SE CMPSH-3AE CMPSH-3CE CMPSH-3E |
SMD Schottky Diode Dual: High Current: Common Cathode SMD Schottky Diode Dual: High Current: In Series SMD Schottky Diode Single: High Current SMD Schottky Diode Dual: High Current: Common Anode ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
UTV120 UTV200 |
12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V COMMON EMITTER transistor 20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
|
GHZTECH[GHz Technology]
|
RF3198SB RF3198PCBA-41X RF3198 |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER DUAL-BAND GSM900/DCS POWER AMP MODULE
|
RF MICRO DEVICES INC
|
LQP03TN12NJ04 AN26032A LQP03TN8N2H04 GRM33B30J104K |
Ultra small , Single Band LNA-IC with Band-limiting filter for 600 MHz Band Applications
|
Panasonic Battery Group
|
MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
MAX2320 MAX2321 MAX2322 MAX2324 MAX2325 MAX2326 MA |
Adjustable.High-Linearity.SiGe.Dual-Band.LNA/Mixer ICs Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs 可调、高线性度、SiGe、双频段、LNA/混频器IC Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs RF/MICROWAVE DOWN CONVERTER Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
|
Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC
|
SKY77916-11 |
Tx-Rx FEM for Quad-Band GSM /GPRS / EDGE w/ 14 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|