| PART |
Description |
Maker |
| MHW7185A MHW7205A MHW7185 |
High Ouput Power Doubler 750 MHz CATV Amplifier
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| LD-445-1000MG |
Multi Transverse Mode Peak Wavelength: 445 nm Optical Ouput Power: 1W Package:5.6 mm, dismounted
|
Roithner LaserTechnik GmbH
|
| MOC8020 MOC8021 |
6-Pin DIP Optoisolators Darlington Ouput(No Base Connection) 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
(MOC8020 / MOC8021) 6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| TS1871AID TS1871AIDT TS1872AIN |
1.8V, INPUT/OUPUT RAIL TO RAIL LOW POWER OP-AMPS
|
ST Microelectronics
|
| TEW4229 TEW4229-1 |
U-BUS/DNIC Input/Ouput Transformer
|
FILTRAN[Filtran LTD]
|
| NQ04018HMA15NRN NQ04018HMA15NVN NQ04018HMA15NVS NQ |
16Amp, wide ouput range, Non-Isolated DC/DC Converter
|
SynQor Worldwide Headquarters
SynQor Worldwide Headqu...
|
| MHW6205-6A |
High Ouput Doubler 600 MHz CATV Amplifier
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| BUW36 BUY69A BUY69B BUX48 BUX80 BDX87 BDX88 BDW51 |
Leaded Power Transistor Darlington
Power Transistors 15 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-3
INDUCTOR PWR UNSHIELD 470UH SMT
Certification- 5.2kVDC Isolation- Power Sharing- Pin Compatible with RH & RK Series, SIP DC-DC Converters- UL94V-0 Package M
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
