| PART |
Description |
Maker |
| HA17012 HA17012B HA17012C |
12-BIT MULTIPLAYING DIGITA-TO-ANALOG CONVERTER 12位MULTIPLAYING数码科技，模拟转换器
From old datasheet system
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
| 2SK735 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp.
NEC[NEC]
|
| MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| PI3B16233 PI3B16233V PI3B16233AE PI3B16233A PI3B16 |
3.3V, 16-BIT TO 32-BIT FET
3.3V/ 16-Bit to 32-Bit FET
3.3V 16-Bit to 32-Bit FET
RELAY SSR SPST 400VAC 120MA 6SMT
|
Pericom Technology
PERICOM[Pericom Semiconductor Corporation]
Pericom Semiconductor Corp.
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PS7241S-1A PS7241S-1A-E3 PS7241S-1A-E4 PS7241S-1A- |
CURRENT LIMIT TYPE 4-PIN SOP 400 V OCMOS FET 1-ch OCMOS FET 电流限制4引脚SOP 400伏OCMOS场效通道OCMOS场效应管
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 2SK2141 K2141 2SK2141JM |
N-channel enhancement type DMOS FET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
