| PART |
Description |
Maker |
| KL-170YGX |
MOISTURE SENSITIVE devices
|
COSMO Electronics
|
| KL-170YGX |
MOISTURE SENSITIVE devices
|
COSMO[COSMO Electronics Corporation]
|
| LMS033YTP LMS033BTP LMS033GLO LMS033GTP LMS033RTP |
5MM MOISTURE SEALED LITEPIPE
|
Visual Communications Company
Visual Communications Compa...
Visual Communications C...
|
| 13861 |
Statshield Moisture Barrier Bags Application Instructions
|
List of Unclassifed Man...
|
| FPZ140 |
Plate capacitors with moisture protection - Class 1 ceramic
|
Vishay
|
| 3141 A3143 UGN3120ELT UGN3120EUA UGN3120LLT UGN312 |
SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 敏感的霍尔效应开关高温作
IC SENSOR 1 CHAN QTOUCH SOT23-6
(UGN3141 - UGN3144) SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION
Sensitive Hall-Effect Switches, High-Temperature
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
http://
|
| ACAS0606AT |
(ACAS0606AT / ACAS0612AT) Precision Thin Film Chip Resistor Array Superior Moisture Resistivity
|
Vishay Siliconix
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| A1806UC4RP P0300SCMC |
SIDACtor devices
solid state crowbar devices
|
Teccor Electronics
|
