| PART |
Description |
Maker |
| MRF166W |
40 W, 500 MHz, TMOS broadband RF power FET
|
MA-Com
MACOM[Tyco Electronics]
|
| MTP2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
|
Motorola, Inc
|
| MTP8N50E MTP8N50E_D ON2651 ON2650 |
From old datasheet system
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semi
|
| MTP2P50 MTP2P50E ON2583 |
From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
|
MOTOROLA[Motorola, Inc]
|
| MTP1N50E MTP1N50E_D ON2560 |
From old datasheet system
TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM
|
Motorola, Inc
ON Semi
|
| MRF275G MRF275 |
N-CHANNEL MOS BROADBAND 100 . 500 MHz RF POWER FET
|
MACOM[Tyco Electronics]
|
| NMA5109-B1M |
High Power Broadband Noise Sources 100 Hz to 500 MHz
|
Micronetics, Inc.
|
| MTE30N50E ON2533 MTE30N50E_D |
N?Channel Enhancement?Mode Silicon Gate
From old datasheet system
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM
|
ON Semi
Motorola, Inc
|
| NS5101-A1X |
Broadband Microwave Coaxial Noise Sources 500 MHz to 4000 MHz
|
Micronetics, Inc.
|
| MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 42 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV10N100E_D ON2669 MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 1000 VOLTS
|
ON Semiconductor
|
