PART |
Description |
Maker |
LC338128M LC338128P LC338128PL LC338128M-80 LC3381 |
1 MEG (131072 words x 8 bit) pseudo-SRAM 1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
LC3564S LC3564SM LC3564SS LC3564ST-10 LC3564ST-70 |
64K (8192 words x 8 bits) SRAM 64K的(8192字8位)SRAM
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
HY62LF16804A-I HY62LF16804A-C HY62LF16804A HY62LF1 |
512K X 16 STANDARD SRAM, 85 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits 512Kx16bit full CMOS SRAM
|
HYNIX SEMICONDUCTOR INC Nel Frequency Controls,inc
|
LC35W256EM LC35W256EM-10W LC35W256ET-10W LC35V256E |
256K (32K words x 8 bits) SRAM Control pins: NOT OE and NOT CE 256K (32K words x 8 bits) SRAM Control pins: OE and CE 256K2K字8位)的SRAM控制引脚:OE和行政长
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd. Sanyo Electric Co., Ltd.
|
LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM Static RAMs (1Mb) Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
|
SANYO[Sanyo Semicon Device]
|
M5M512R M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ- |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation
|
M5M5V108CFP-10H M5M5V108CFP-10X M5M5V108CFP-70H M5 |
From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
LC35256AM LC35256AT-10LV LC35256AT-12LV LC35256AT- |
256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
|
SANYO[Sanyo Semicon Device]
|
TC551001PL-70 TC551001FL-10 TC551001FL-70 |
x8 SRAM x8SRAM
131,072 Words x 8-Bit Static RAM
|
Toshiba
|
HY62SF16404C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|