| PART |
Description |
Maker |
| PECLDL-10-1 PECLDL-10-4 PECLDL-10-7 PECLDL-10-9 PE |
LTC3824 Evaluation Kit
LT3844EFE Evaluation Kit
LT3476EUHF Evaluation Kit
LTC3835EGN-1 Evaluation Kit 延迟线|可编程| 1线| 1 -技术咨询|混合|双酯| 32脚|塑料
DELAY LINE|PROGRAMMABLE|1-LINE|1-TAP|HYBRID|DIP|32PIN|PLASTIC 延迟线|可编程| 1线| 1 -技术咨询|混合|双酯| 32脚|塑料
|
Advanced Power Electronics, Corp.
|
| FQAF10N80 |
CAPACITOR KIT, FLEXITERM MLCCCAPACITOR KIT, FLEXITERM MLCC; Kit contents:30 Values 6.7 A, 800 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET
800V N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| 21620 QFEXR-EVAL-KIT |
QFEXR-EVAL-KIT 8.75KB (PDF)
QFEXR-EVAL-KIT - Evaluation Kit for the Am79C871 Device
|
Advanced Micro Devices
|
| NBX-10915 NBX-10970 |
LOCKING HASP KIT, INTERNAL PANEL HINGED BRACKET KIT
|
Bud Industries, Inc.
http://
|
| CSC-11242 CSC-11244 CSC-11246 CSC-11248 CSA-11266 |
SUPPORT ANGLE KIT, CHASSIS KIT
|
Bud Industries, Inc.
|
| EDI9LC644V1312BC EDI9LC644V1310BC EDI9LC644V1512BC |
SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:133MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
|
White Electronic Designs
|
| AM79C930EVAL-HW |
PCnet-Mobile Evaluation Kit
EMULATOR KIT ADAPTER, 100 VQFP(FPGA)
44-PIN A PART PLCC(FPGA)
|
Advanced Micro Devices
|
| SDA9253 SDA9253GEG |
2.6Mbit Dynamic Sequential Access Mem...
2.6 MBit Dynamic Sequential Access Memory for Television Applications (TV-SAM)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
