| PART |
Description |
Maker |
| HM27C101AG-10 |
128K x 8 CMOS EPROM Memory
|
Hitachi Semiconductor
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| NM27C010 27C010 |
1,048,576-Bit (128K x 8) High Performance CMOS EPROM 1,048,576位（128K的8）高性能CMOS存储
1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| E28F010-65 N28F010-65 F28F010-65 P28F010-65 E28F01 |
1024K (128K x 8) CMOS FLASH MEMORY
1024K (128K x 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Intel Corporation
Intel, Corp.
Intel Corp.
|
| TP28F010-90 TE28F010-150 |
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
28F010 1024K (128K X 8) CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Intel, Corp.
|
| CY27H010-25JC CY27H010-25ZC CY27H010-30JC CY27H010 |
128K x 8 High-Speed CMOS EPROM
|
Cypress Semiconductor
|
| SL74HC652 HC652 SL74HC652N SL74HC652D |
EPROM IC; Memory Size:128Kbit; Memory Configuration:16K x 8; Access Time, Tacc:250ns; Package/Case:28-DIP; EPROM Type:Parallel UV Erasable; Supply Voltage Nom, Vcc:5V; Mounting Type:Through Hole; Voltage Rating:5V
Octal 3-State Bus Transceivers and D Flip-Flops(High-Performance Silicon-Gate CMOS)
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
| MX26C1000ATC-90 MX26C1000A MX26C1000AMC-10 MX26C10 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
|
MCNIX[Macronix International]
|
| MX26C1000B MX26C1000BMC-10 MX26C1000BMC-12 MX26C10 |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
|
Macronix International
|
| HT27C010 |
CMOS 128K X 8-Bit OTP EPROM
OTP CMOS 128Kx 8-Bit EPROM
|
Holtek Semiconductor In...
HOLTEK[Holtek Semiconductor Inc]
|
| AT27BV010 AT27BV010-12JC AT27BV010-12JI AT27BV010- |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM
|
ATMEL Corporation
|
