PART |
Description |
Maker |
CY7C1513JV18-250BZXC |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
R1Q4A3609ABG40RS0 R1Q6A3609ABG40RS0 R1Q3A3609ABG40 |
1M X 36 QDR SRAM, PBGA165 1M X 36 QDR SRAM, 0.45 ns, PBGA165 36-Mbit QDR?II SRAM 2-word Burst 36-Mbit QDR?⑸I SRAM 2-word Burst 36-Mbit QDR垄芒II SRAM 2-word Burst
|
http:// Renesas Electronics Corporation
|
CY7C1312CV18-167BZC CY7C1312CV18-167BZI CY7C1314CV |
18-Mbit QDR-IISRAM 2-Word Burst Architecture 1M X 18 QDR SRAM, 0.5 ns, PBGA165 18-Mbit QDR-IISRAM 2-Word Burst Architecture 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
R1Q2A3609 R1Q2A3636 R1Q2A3618 R1Q2A3609ABG-60R R1Q |
36-Mbit QDRII SRAM 2-word Burst 36-Mbit QDR™II SRAM 2-word Burst
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
CY7C1510AV18-200BZC CY7C1510AV18-200BZI CY7C1510AV |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1510V18-278BZC CY7C1510V18-278BZI CY7C1510V18- |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR-II??SRAM 2-Word Burst Architecture
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1413BV18-300BZXC CY7C1413BV18-300BZXI CY7C1413 |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture 36-Mbit QDR??II SRAM 4-Word Burst Architecture 36-Mbit QDR?II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1543KV18-400BZC CY7C1545KV18-450BZXI |
Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CY7C1263V18-300BZI |
36-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CYRS1543AV18 |
72-Mbit QDR? II SRAM Four-Word Burst
|
Cypress Semiconductor
|
R1QFA7218AB R1QCA7218AB R1QDA7218AB R1QCA7236AB R1 |
72-Mbit QDR SRAM 2-word Burst 72-Mbit QDR II SRAM 4-word Burst
|
Renesas Electronics Corporation
|