PART |
Description |
Maker |
ATF16V8B-15PC ATF16V8B ATF16V8B-10PC ATF16V8B/BQ/B |
Electrically-Erasable PLD 电可擦除可编程逻辑器件 ATF16V8B/BQ/BQL [Updated 4/01. 19 Pages] 250 gate electrically erasable PLD. 20 pins From old datasheet system 250 gate electrically erasable PLD, 20 pins
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Atmel, Corp. Atmel Corp
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PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN- |
20ns programmable electrically erasable logic array 15ns programmable electrically erasable logic array Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列
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ICT Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers http://
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PEEL16V8J-15 PEEL16V8J-25 PEEL16V8P-15 PEEL16V8P-2 |
PEEL?V8 -15/-25 CMOS Programmable Electrically Erasable Logic PEEL??V8 -15/-25 CMOS Programmable Electrically Erasable Logic PEEL⑩6V8 -15/-25 CMOS Programmable Electrically Erasable Logic
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List of Unclassifed Manufacturers ETC
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24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM From old datasheet system CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
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Turbo IC
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28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
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Turbo IC
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PALCE29MA16H-35PC |
Electrically-Erasable PLD
|
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W27E020 W27E020-12 W27E020-70 W27E020-90 W27E020P- |
256K X 8 ELECTRICALLY ERASABLE EPROM
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Winbond Electronics Corp WINBOND[Winbond]
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LVT16V8-6A LVT16V8-6DB |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
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NXP Semiconductors N.V.
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W27E520S-70 W27E520W-70 W27E520S-90 W27E520W-90 |
64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics
|