| PART |
Description |
Maker |
| CR12-120 CR12-010 CR16-020 CR12-020 CR20-040 CR16- |
Rectifiers, General Purpose 12 A, 1200 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 12 A, 100 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 16 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 20 A, 400 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
16 A, 600 V, SILICON, RECTIFIER DIODE, DO-4
16 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
|
Central Semiconductor, Corp.
Vishay Intertechnology, Inc.
CENTRAL SEMICONDUCTOR CORP
|
| MBR360 MBR350 MBR320 MBR330 MBR340 |
3 A, 30 V, SILICON, RECTIFIER DIODE
(MBR3xx) Axial Lead Rectifiers
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS
3 A, 20 V, SILICON, RECTIFIER DIODE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers
Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4
Replacement with:PBY272R
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| EGP20A08 EGP20F-TP |
2.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts
DIODE GPP 2A 300V HI EFF DO15 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-15
|
http://
Micro Commercial Components, Corp.
|
| MDD310-22N1 MDD310 MDD310-08N1 MDD310-12N1 MDD310- |
High Power Diode Modules 305 A, 1600 V, SILICON, RECTIFIER DIODE
TV 100C 100#22D SKT RECP
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MDD44-12N1B MDD44-08N1B MDD44 MDD44-18N1B MDD44-14 |
DIODE MODULES 59 A, 1800 V, SILICON, RECTIFIER DIODE, TO-240AA
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 1N6661 1N6663 JAN1N6663 JANTXV1N6663 JANTX1N6663 1 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation
Microsemi, Corp.
|
| B500C5000-3000 B40C5000-3000 B125C5000-3000 B250C5 |
Silicon-Bridge Rectifiers 3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Silicon-Bridge Rectifiers 3.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Silicon-Bridge Rectifiers 3.5 A, 80 V, SILICON, BRIDGE RECTIFIER DIODE
|
SEMIKRON[Semikron International]
http://
|
| UMA5817 UMA5818 UMA5819 MA5817 MVUMA5819 MQUMA5817 |
1 A, 40 V, SILICON, SIGNAL DIODE
ULTRAMITTE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 1 A, 30 V, SILICON, SIGNAL DIODE
1 A, 20 V, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| BZX85C30 BZX85C33 BZX85C6V2 BZX85C6V8 BZX85C43 BZX |
18V, 1W Zener Diode
Zeners
5.1V, 1W Zener Diode
4.7V, 1W Zener Diode
3.9V, 1W Zener Diode
6.2V, 1W Zener Diode
5.6V, 1W Zener Diode
11V, 1W Zener Diode
10V, 1W Zener Diode
8.2V, 1W Zener Diode
27V, 1W Zener Diode
13V, 1W Zener Diode
22V, 1W Zener Diode
51V, 1W Zener Diode
56V, 1W Zener Diode
33V, 1W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
|
