| PART |
Description |
Maker |
| LQH32MN4R7K23L LQH32MN1R0M23L LQH32MN330J23L LQH32 |
INDUCTOR 4.7UH 10% 270MA 1210
INDUCTOR 1.0UH 20% 445MA 1210
INDUCTOR 33UH 5% 115MA 1210
1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR 390UH 5% 50MA 1210
|
MURATA MANUFACTURING CO LTD
|
| 1210B364K160YW 1210B364M250YW 1210B364J160YW 1210B |
CAPACITOR, CERAMIC, MULTILAYER, 16 V, X7R, 0.36 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 25 V, X7R, 0.36 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.36 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, X7R, 0.00036 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 250 V, X7R, 0.00036 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 16 V, X7R, 0.00036 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, X7R, 0.00036 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 300 V, X7R, 0.00036 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 25 V, X7R, 0.00036 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 1500 V, X7R, 0.00036 uF, SURFACE MOUNT, 1210 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 2000 V, X7R, 0.00036 uF, SURFACE MOUNT, 1210 CHIP
|
Novacap
|
| APT25GT120BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA
|
Advanced Power Technology, Ltd.
|
| APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| STTH6012 STTH6012W |
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-247
Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| GRM32ER60J476M |
Chip Monolithic Ceramic Capacitor 1210 X5R 47μF 6.3V
Chip Monolithic Ceramic Capacitor 1210 X5R 47楼矛F 6.3V
|
Murata Manufacturing Co., Ltd.
|
|
