PART |
Description |
Maker |
HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28 x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
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HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit) 4M SRAM (512-kword 8-bit) 4M SRAM (512-kword × 8-bit) 4M SRAM (512-kword 】 8-bit) Memory>Low Power SRAM
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Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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R1RP0404DGE-2PR R1RP0404D R1RP0404DGE-2LR |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (1-Mword 】 4-bit) 4M High Speed SRAM (1-Mword × 4-bit)
|
RENESAS[Renesas Electronics Corporation]
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BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48 Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48 Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
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Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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AS7C31025B AS7C31025B-20TJIN AS7C31025B-10JC AS7C3 |
SRAM - 3.3V Fast Asynchronous 128 x 64 pixel format, LED or EL Backlight available 8-Bit Parallel-Load Shift Registers 16-TVSOP -40 to 85 8-Bit Parallel-Load Shift Registers 16-SSOP -40 to 85 8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85 3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 3.3V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
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Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
|
LPC1768FET100 LPC1766FBD100 LPC1768FBD100 LPC1763F |
32-bit ARM Cortex-M3 microcontroller; up to 512 kB flash and 64 kB SRAM with Ethernet Cortex-M3 with 256 kB flash, 64 kB SRAM, 12-bit ADC, DAC, I2S
|
NXP Semiconductors N.V.
|
LC35256DM LC35256DT-10 LC35256DT-70 LC35256D-10 25 |
x8 SRAM Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
HM628128D HM628128DLP-7UL |
1 M SRAM (128-kword×8-bit)(1M静态RAM (128k字) STANDARD SRAM, PDIP32
|
Hitachi,Ltd.
|
GX60N60C2D1 |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
|
IXYS CORP
|
UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
UT62256SC-70 UT62256 UT62256SC-35 UT62256SC-35L UT |
32K X 8 BIT LOW POWER CMOS SRAM 32K的8位低功耗CMOS SRAM From old datasheet system
|
UTRON Technology Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
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