PART |
Description |
Maker |
M5M5V5636GP-16 |
Memory>Fast SRAM>Network SRAM 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
RENESAS[Renesas Electronics Corporation]
|
HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (512-kword x 8-bit) BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28 x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48 Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48 Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp. NEC Corp. NEC[NEC]
|
LPC1768FET100 LPC1766FBD100 LPC1768FBD100 LPC1763F |
32-bit ARM Cortex-M3 microcontroller; up to 512 kB flash and 64 kB SRAM with Ethernet Cortex-M3 with 256 kB flash, 64 kB SRAM, 12-bit ADC, DAC, I2S
|
NXP Semiconductors N.V.
|
R1LV0408CSP-7LC R1LV0408C-C R1LV0408CSA-5SC R1LV04 |
Memory>Low Power SRAM 4M SRAM (512-kword X 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
HT6116 HT6116-70 |
CMOS 2K8-Bit SRAM CMOS 2K??8-Bit SRAM CMOS 2Kx8-Bit SRAM
|
HOLTEK[Holtek Semiconductor Inc]
|
89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位)低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
ADSP-2195MBCA-140 ADSP-2195MBST-140 ADSP-2195MKCA- |
16-bit Fixed-Point DSP, 160 MIPS, 80 Kbytes RAM ADSP-2195 16-bit Fixed-Point DSP 140MHz; on-chip SRAM: 1.3M bit; DSP microcomputer 160MHz; on-chip SRAM: 1.3M bit; DSP microcomputer
|
Analog Devices
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