Part Number Hot Search : 
UPD7808 ASL40 TCD1304A 33079 APU428 28F01 LM1111 RB491DS
Product Description
Full Text Search

MRF8P9300HR6 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF8P9300HR6_133788.PDF Datasheet


 Full text search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs


 Related Part Number
PART Description Maker
MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
IRF540_D ON0285 IRF540/D IRF540-D IRF540 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门))
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
RFP10P12 RFM10P15 (RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
GE Solid State
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
SSM5P05FU Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
SSM3J02F 600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
PTF181301 PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
INFINEON[Infineon Technologies AG]
SSM3J14T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
MRF19125 MRF19125R3 MRF19125SR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF281 MRF281SR1 MRF281SR106 MRF281ZR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF19085 MRF19085LR3 MRF19085LSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 RF POWER FIELD EFFECT TRANSISTORS
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
 
 Related keyword From Full Text Search System
MRF8P9300HR6 Circuit MRF8P9300HR6 Silicon MRF8P9300HR6 Specification of MRF8P9300HR6 reserved MRF8P9300HR6 outputs
MRF8P9300HR6 Data MRF8P9300HR6 download MRF8P9300HR6 Supply MRF8P9300HR6 Range MRF8P9300HR6 analog devices
 

 

Price & Availability of MRF8P9300HR6

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.29492998123169