| PART |
Description |
Maker |
| N02L163WC2AT2 N01L163WC2AB2-55I N01L163WC2AB-55I N |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 】 16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| N02L163WC2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
| N02L1618C1AT2-70I N02L1618C1A N02L1618C1AB N02L161 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| K6F2016R4G-XF85 K6F2016R4G K6F2016R4G-F K6F2016R4G |
2Mb(128K x 16 bit) Low Power SRAM
|
SAMSUNG[Samsung semiconductor]
|
| M29DW323DB70ZA6 M29DW323DT M29DW323DT70N1E M29DW32 |
CAP 100PF 50V 20% Z5U SMD-0805 TR-7 PLATED-NI/SN
Low-Noise Precision Operational Amplifier 8-SOIC 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 20-LCCC -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双24分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
High-Speed, Low-Power, Precision Quad Operational Amplifier 14-CDIP -55 to 125 32兆位4Mb的x8或功能的2Mb x16插槽，双4分，启动V电源快闪记忆
Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 14-PDIP
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 8:24 / Boot Block 3V Supply Flash Memory
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
SGS Thomson Microelectronics
|
| M59DR032A M59DR032B M59DR032A120ZB1T M59DR032A100Z |
2M X 16 FLASH 1.8V PROM, 120 ns, PBGA48
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory 32兆位Mb x16插槽，双行，第低压闪
32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
|
http://
NUMONYX
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| IRFR3910PBF IRFR3910TR IRFR3910TRPBF IRFR3910PBF-1 |
16 A, 100 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
ULTRA LOW ON RESISTANCE
Ultra Low On-Resistance
|
International Rectifier
|
| HY62SF16201ALLF-85 HY62SF16201ASLF-85 HY62SF16201A |
Super Low Power Slow SRAM - 2Mb
x16 SRAM
|
Hynix Semiconductor
|
| 3150O-SERIES 3450O-SERIES 3551TPQ0 3551TPQ1 3551TP |
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Microprocessor Supervisory Reset Circuits with Edge-Triggered, One-Shot Manual Reset
Optoelectronic 光电
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 光电
Evaluation System/Evaluation Kit for the MAX6660 光电
|
Rubycon, Corp.
Fairchild Semiconductor, Corp.
DB Lectro, Inc.
Cypress Semiconductor Corp.
RECOM Electronic GmbH
|
| MAX924C_D MAX924CPE MAX924EPE MAX924ESE MAX924MJE |
Triple 3-Input Positive-AND Gates 14-CDIP -55 to 125
Ultra Low-Power / Single/Dual-Supply Comparators
Ultra Low-Power, Single/Dual-Supply Comparators
Ultra Low-Power Single/Dual-Supply Comparators
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
