| PART |
Description |
Maker |
| HMC682LP6C HMC682LP6CE |
HIGH IP3 DUAL CHANNEL DOWNCONVERTER w/ LO SWITCH, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HMC469MS8G |
SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| ADL5802 |
Dual Channel High IP3 100 MHz TO 6 GHz Active Mixer
|
Analog Devices
|
| AM40-0023 AM40-0023PIN |
Ultra Low Noise pHEMT Dual Channel Amplifier, 1.710-1.910 GHz
|
M/A-COM Technology Solutions, Inc.
|
| UPG2164T5N-A |
DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
|
California Eastern Labs
|
| ADG936BCP-R-500RL7 ADG936BCP-R-REEL ADG936BRU-REEL |
Wideband 4 GHz 36 dB Isolation at 1 GHz CMOS 1.65 V to 2.75 V Dual SPDT
|
Analog Devices
|
| SST13LP05-MLCF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
|
SILICON STORAGE TECHNOLOGY INC
|
| SST13LP01-QDF-K SST13LP01 SST13LP01-QDF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR26045EF |
45 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21030EF |
30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
