| PART |
Description |
Maker |
| MH16S64PHB-6 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16S64BAMD-6 B99029 |
From old datasheet system
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH16S72BDFA-8 MH16S72BDFA-7 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16S72BDFA-8 MH16S72BDFA-7 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB E99007 |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi
|
| M6MGB_T162S2BVP M6MGB E99005_A M6MGB162S2BVP M6MGT |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 75220 |
1.85 by 1.85mm (.073 by .073) Pitch GbX? Module-to-Backplane Connector System In 4- and 5-Pair Columns
|
Molex Electronics Ltd.
|
| M5M29GT160BVP-80 M5M29GB160BVP-80 |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Corporation
|
| THMY641661BEG THMY641661BEG-10 THMY641661BEG-80 |
16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE
16/777/216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MK32VT1632 MK32VT1632-10YC |
16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK)
|
OKI[OKI electronic componets]
|
| AK5916384GP-60 AK5916384SP-70 |
16,777,216 Word by 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
