| PART |
Description |
Maker |
| PLC18V8ZIADH PLC18V8ZIDB PLC18V8Z25A PLC18V8ZIAA P |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
Zero standby power CMOS versatile PAL devices OT PLD, 25 ns, PQCC20
Zero standby power CMOS versatile PAL devices OT PLD, 40 ns, PDSO20
Zero standby power CMOS versatile PAL devices OT PLD, 25 ns, PDSO20
|
NXP Semiconductors N.V.
|
| LA7357 |
PAL/SECAM Discrimination Circuit for VHS VCRs(用于VHS VCR的PAL/SECAM的鉴别电 PAL / SECAM制式歧视录影带录像机电路（用于录影机的PAL / SECAM制式的鉴别电路）
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| TDA3562A |
PAL/NTSC ONE-CHIP DECODER PAL / NTSC制式的单芯片解码
|
STMicroelectronics N.V.
|
| SAA7114 |
PAL/NTSC/SECAM video decoder with adaptive PAL/NTSC comb filter, VBI-data slicer and high performance scaler
|
Philips
|
| SAA7114H/V2 |
SAA7114; PAL/NTSC/SECAM video decoder with adaptive PAL/NTSC comb filter, VBI data slicer and high performance scaler
|
Philips
|
| M52771ASP |
PAL/NTSC Bus control 1 chip CTV
NTSC / PAL TV SIGNAL PROCESSOR
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| SAA7115 |
PAL/NTSC/SECAM Video Decoder with Adaptive PAL/NTSC Comb Filter, High Performance Scaler, I2C Sliced Data Readback and SQ PIXEL OUTPUT
|
Philips Semiconductors
|
| HMP8117 |
Decoder, NTSC/PAL Video, (M) NTSC and (B, D, G, H, I, M, N, NC) PAL Operation
|
Intersil
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
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