| PART |
Description |
Maker |
| K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| 422B 422E |
Max voltage:24V; 200mA; data processing data line protector. For data processing equipment, long line transmission systems, control processing computers, building managenent systems
|
Protek Devices
|
| M13L2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| HI-8787 |
(HI-8787 / HI-8788) 16-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT
|
Holt Integrated Circuits
|
| HI-8788PQTF HI-8787 HI-8787_06 HI-8787PQI HI-8787P |
ARINC INTERFACE DEVICES 16 bit parallel data converted to 429 & 561 serial data out
|
HOLTIC[Holt Integrated Circuits]
|
| HI-8785PSTF HI-8783 HI-8783_06 HI-8783PDI HI-8783P |
ARINC INTERFACE DEVICE 8 bit parallel data converted to 429 & 561 serial data out
|
HOLTIC[Holt Integrated Circuits]
|
| NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
| RC288DPL-D RCV288DP RC288DPI RCV288DPI RC288DPI-D |
V.34 Data/V.17 Fax/Voice Modem Data Pumps
|
List of Unclassifed Manufacturers
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
