| PART |
Description |
Maker |
| W29EE512 W29EE512P-12 W29EE512P-12B W29EE512P-70 W |
64K X 8 CMOS FLASH MEMORY
|
Winbond
|
| W49F102Q45 W49F102P40 W49F102P45 W49F102Q40 |
64K X 16 CMOS FLASH MEMORY
|
Winbond Electronics
|
| A29512A A29512A-55 A29512A-70 A29512A-90 A29512AL- |
64K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
64K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory
64K X 8 Bit CMOS 5.0 Volt-only Uniform Sector Flash Memory
|
AMICC[AMIC Technology]
|
| AT29LV1024-15 AT29LV1024-15JC AT29LV1024-15JI AT29 |
1 Megabit 64K x 16 3-volt Only CMOS Flash Memory
|
ATMEL Corporation
|
| AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM
From old datasheet system
1-megabit (64K x 16) 5-volt Only Flash Memory
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
| 89C536 P89C536 P89C538NBAA P89C536NBAA P89C538NBBB |
CMOS single-chip 8-bit microcontrollers with FLASH program memory
80C51 8-bit microcontroller family 16K/64K/512 FLASH
|
PHILIPS[Philips Semiconductors]
|
| EN29LV512 EN29LV512-45RJCP EN29LV512-70SI EN29LV51 |
512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
|
ETC
Eon Silicon Solution Inc.
|
| AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V，CMOS 512K位整体擦除闪速存储器)
IC-512K FLASH MEMORY
4-bit magnitude comparators 16-PDIP 0 to 70
Quad 2-input exclusive-OR gates 14-PDIP 0 to 70
Decade Counter 14-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70
Quad bistable latches 16-SOIC 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70
4-bit magnitude comparators 16-SOIC 0 to 70
Quad bistable latches 16-PDIP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70
8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
ER 14C 14#16 PIN RECP LINE
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
| A29512-70 A29512A-55 A29512A-70 A29512-55 A29040L- |
64K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
|
AMIC Technology
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
