PART |
Description |
Maker |
ASTD-XXXX |
PLANAR TUNNEL (BACK) DIODE
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Advanced Semiconductor
|
1N4393 |
GENERAL PURPOSE TUNNEL DIODE
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New Jersey Semi-Conduct...
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1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V,最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电3V,最大反向电流降.01μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电12V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电14V的,最大反向电.05μA的硅外延平面型齐纳二极管 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V,最大反向电.8μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V,最大反向电.0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V,最大反向电0μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V,最大反向电.5μA的硅外延平面型齐纳二极管) Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V,最大反向电0μA的硅外延平面型齐纳二极管) PC 5/10-G-7,62 PCV 5/ 4-G-7,62 Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V,最大反向电0μA的硅外延平面型齐纳二极管) From old datasheet system Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
|
ADN2526 ADN2526ACPZ ADN2526ACPZ-R2 ADN2526ACPZ-R7 |
11.3 Gbps Active Back-Termination, Differential Laser Diode Driver 11.3 Gbps Active Back-Termination Differential Laser Diode Driver; Package: 16-LFCSP (3x3mm, 1.50mm exposed pad); Temperature Range: -40°C to 125°C SPECIALTY INTERFACE CIRCUIT, QCC16
|
Analog Devices, Inc.
|
DSEP30-06CR |
HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) 30 A, 600 V, SILICON, RECTIFIER DIODE
|
IXYS, Corp. IXYS[IXYS Corporation]
|
AMD-8131BLC |
Hyper Transport PCI-X Tunnel
|
Advanced Micro Devices
|
AMD-8131 |
AMD-8131 HyperTransport PCI-X Tunnel Revision Guide
|
Advanced Micro Devices
|
ADN2525 ADN2525ACPZ-WP ADN2525ACPZ-R2 ADN2525ACPZ- |
From old datasheet system 10.7 Gbps Active Back-Termination, Differential Laser Diode Driver
|
Analog Devices, Inc. AD[Analog Devices]
|
KDZ2.0EV KDZ3.0EV KDZ4.7EV KDZ6.8EV KDZ4.3EV KDZ5. |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE(CONSTANT VOLTAGE REGULATION/ REFERENCE VOLTAGE) ZENER DIODE SILICON EPITAXIAL PLANAR DIODE(CONSTANT VOLTAGE REGULATION, REFERENCE VOLTAGE) surface mount silicon Zener diodes 硅表面贴装齐纳二极管 240 x 320 pixel format, White Edge LED backlight 稳压二极管外延硅平面二极管(恒压规例,参考电压) 40 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor 40 个字x 1 线5 x 7 点阵字符和光
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Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings http://
|
NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
NX6411GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
California Eastern Labs
|
KDV1430 KDV1430A KDV1430B KDV1430C KDV1430D |
Silicon diode for FM radio band tuning applications VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
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Korea Electronics (KEC) KEC(Korea Electronics)
|