PART |
Description |
Maker |
IRFR120A IRFU120A IRFR120ATF IRFR120ATM IRFU120ATU |
Advanced Power MOSFET Avalanche Rugged Technology N-CHANNEL POWER MOSFET 100V N-Channel A-FET / Substitute of IRFU110 100V N-Channel A-FET / Substitute of IRFR120 (IRFR120A / IRFU120A) Advanced Power MOSFET
|
Fairchild Semiconductor
|
IRL3102 IRL3102L |
Advanced Process Technology HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
|
IRF[International Rectifier]
|
IRF2204PBF IRF2204PBF-15 |
75 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB HEXFET? Power MOSFET Advanced Process Technology
|
International Rectifier
|
IRFM220A |
N-Channel Power MOSFET(N娌??澧?己?????OS?烘?搴??锛??婧????负200V锛??????讳负0.8惟锛???垫?涓?.13A锛? Advanced Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
IRFPS3810PBF IRFPS3810PBF-15 |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
SFS9620 |
Advanced Power MOSFET 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
SFS9630 IRFS9630 |
Advanced Power MOSFET 4.4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRF610A |
Advanced Power MOSFET N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
SFP9520 SFP9520NL |
100V P-Channel A-FET / Substitute of IRF9520 6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Advanced Power MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A) HEXFET? Power MOSFET Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) Advanced Process Technology
|
IRF[International Rectifier]
|
SFS9634 |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|