PART |
Description |
Maker |
AS4C4M4E1Q AS4CM4E1Q-50 AS4CM4E1Q-60 AS4CM4EOQ AS4 |
Thick Film Chip Resistor - RMC 1 3.9 5% R 4米4的CMOS QuadCAS的DRAM(江户)家庭 4M X 4 CMOS Quad CAS DRAM (EDO) family 4M x 4 CMOS QuadCAS DRAM (EDO) family
|
Analog Devices, Inc. ALSC[Alliance Semiconductor Corporation]
|
AS4C1M16E5-60TC AS4C1M16E5-50TC AS4C1M16E5-60JC AS |
DRAM|EDO|1MX16|CMOS|TSOP|50PIN|PLASTIC DRAM|EDO|1MX16|CMOS|SOJ|42PIN|PLASTIC 内存| EDO公司| 1MX16 |CMOS | SOJ | 42PIN |塑料 1M X 16 EDO DRAM, 50 ns, PDSO44
|
Amphenol, Corp. ALLIANCE SEMICONDUCTOR CORP
|
AS4C256K16E0-30JC AS4C256K16E0-35JC |
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 30 ns, PDSO40 5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 35 ns, PDSO40 5V 256Kx16 CMOS DRAM (EDO) 5V56Kx16的CMOS的DRAM(江户)
|
Alliance Semiconductor, Corp.
|
KMM594000-10 KMM594000-8 KMM594000 |
4M x 9 CMOS DRAM Memory Module 4米9的CMOS DRAM记忆体模 4M x 9 CMOS DRAM SIMM Memory Module
|
Samsung Semiconductor Co., Ltd. Samsung Electronics
|
MB8502D064AA-70 MB8502D064AA-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块) CMOS 2M?64 BIT Hyper Page Mode DRAM Module(CMOS 2M?64 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu Limited
|
MB85343C-70 |
CMOS 1M×32 BIT
Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) 的CMOS 100万32位的超页模式内存的CMOS00万32位超级页面存取模式动态内存模块)
|
Fujitsu Limited Fujitsu, Ltd.
|
MB8502E064AB-70 MB8502E064AB-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
AS4C4M4F1 AS4C4M4F0 |
5V 4M×4 CMOS DRAM (Fast Page Mode)(5V 4M×4 CMOS 动态RAM(快速页面模式))
|
Alliance Semiconductor Corporation
|
AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode) 256K X 16 FAST PAGE DRAM, 50 ns, PDSO40 x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp... Electronic Theatre Controls, Inc.
|
KM41C464 |
CMOS DRAM
|
Samsung Electronics
|
K4E641612D K4E661612D |
CMOS DRAM
|
Samsung semiconductor
|