| PART |
Description |
Maker |
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| CY62148ELL-55SXA |
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| TC55V16366FF-133 |
512K Word x 36 Bit Synchronous Pipelined Burst Static RAM(512K 字x 36位同步管道脉冲静RAM)
|
Toshiba Corporation
|
| IS64LV51216-12TLA3 IS64LV51216-12TA3 IS61LV51216-1 |
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 512K X 16 STANDARD SRAM, 8 ns, PDSO44
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| CY7C1049CV33-15VXE |
4 Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 3.0 to 3.6 V; 512K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Cypress Semiconductor, Corp.
|
| CY7C1012DV33-10BGXI |
12-Mbit (512K X 24) Static RAM; Density: 12 Mb; Organization: 512Kb x 24; Vcc (V): 3.0 to 3.6 V; 512K X 24 STANDARD SRAM, 10 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
| TC554001AFI-70 TC554001AFTI-85 |
512K word x 8 Static RAM(512K x 8 静RAM)
|
Toshiba Corporation
|
| TC554001ATRI-70V TC554001AFI-70V TC554001ATRI-85V |
512K word x 8 Static RAM(512K x 8 静RAM)
|
Toshiba Corporation
|
| IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道，双循环取消选择静态RAM
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
|
