| PART |
Description |
Maker |
| GS74104ATP-10 GS74104AJ-10I GS74104AGJ-10 GS74104A |
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 8 ns, PDSO44
|
GSI Technology, Inc.
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| GS74104J GS74104TP |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
| HY62VF08401C HY62VF08401C-SS55I |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
Super Low Power Slow SRAM - 4Mb
|
HYNIX SEMICONDUCTOR INC
|
| GS74116ATJ |
256K x 16 4Mb Asynchronous SRAM
|
GSI Technology
|
| N04L1618C2AB2-70I N04L1618C2A N04L1618C2AB N04L161 |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| N04L163WC2AT2 N04L163WC2A N04L163WC2AB N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N04L63W1AB27I N04L63W1AB27IT N04L63W1AT27I N04L63W |
4 Mb Ultra-Low Power Asynchronous CMOS SRAM
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit
|
ON Semiconductor
|
| M68AW512M |
8 MBIT (512K X16) 3.0V ASYNCHRONOUS SRAM
|
STMicroelectronics
|
| M68AW512ML M68AW512MN70ND6T M68AW512 M68AW512M M68 |
8 Mbit (512K x16) 3.0V Asynchronous SRAM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M68AR512D M68AR512DN70ZB1T M68AR512DN70ZB6T M68AR5 |
8 MBIT (512K X16) 1.8V ASYNCHRONOUS SRAM
8 Mbit 512K x16 1.8V Asynchronous SRAM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
|
