| PART |
Description |
Maker |
| J304-5 |
FET Design Catalogue 1979
|
Siliconix
|
| LDEDD3330JA5N00 LDEDD4100-A0 LDECD3470JA5N00 LDEDD |
Non-encapsulated construction, Stacked technology
SMD Film Capacitors Catalogue
SMD Film Capacitors Catalogue
|
Kemet Corporation
|
| 1942640000 1942740000 1942460000 1793370000 179335 |
Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 3.81 mm (0.150 inch) | Plug connectors
Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 3.81 mm (0.150 inch) | Plug connectors
|
Weidmuller
|
| STP3NA100 STP3NA100FP |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN 老产品：不适合用于新设计中
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
|
| HER207 HER207-T3 HER207-TB HER206 HER206-T3 HER206 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
2.0A HIGH EFFICIENCY RECTIFIER 2.0安培高速整流二极管
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
|
| CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM75TU-12F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| DPA422PN DPA423GN DPA425GN DPA424PN DPA425PN DPA42 |
DC-DC Forward Converter Design Guide Application Note AN-31
DPA-Switch DC-DC Forward Converter Design Guide
|
Power Integrations, Inc.
Power Integrations, Inc...
|
| CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts
128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| IDT77915 IDT77914 |
NICStAR Reference Design 155Mbps Network Interface Card NIC
NICStAR⑩ Reference Design 155Mbps Network Interface Card NIC
NICStARReference Design 155Mbps Network Interface Card NIC NICStAR⑩参考设155Mbps网卡网卡
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
