| PART |
Description |
Maker |
| FS1209DH FS1209BH FS1209MH FS1210BH |
Standard Gate SCRs
600 V, standard SCR
200 V, standard SCR
400 V, standard SCR
|
Fagor
|
| WG14013FR04 WG12013FR02 WG18015R FR35 WG18027R12 W |
1340 A, 1300 V, GATE TURN-OFF SCR
2150 A, 1500 V, SYMMETRICAL GTO SCR
820 A, 4000 V, GATE TURN-OFF SCR
1685 A, 2700 V, GATE TURN-OFF SCR
870 A, 600 V, GATE TURN-OFF SCR
700 A, 600 V, GATE TURN-OFF SCR
730 A, 1000 V, GATE TURN-OFF SCR
890 A, 1000 V, GATE TURN-OFF SCR
|
WESTCODE SEMICONDUCTORS LTD
|
| TA20401201DH TA20401203DH POWEREXINC-C430F TC20172 |
1884 A, SCR
4396 A, SCR
2198 A, SCR
471 A, SCR
549.5 A, SCR
78.5 A, 200 V, SCR
1570 A, SCR
196.25 A, SCR
1256 A, SCR
863.5 A, SCR
235.5 A, SCR
392.5 A, SCR
1413 A, SCR
125.6 A, 500 V, SCR
1177.5 A, SCR
|
POWEREX INC
|
| MCR100-6A |
Standard Gate SCR
|
DnI
|
| BD814 BD844 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|02AA
|
Teridian Semiconductor, Corp.
|
| 350PEQ50W 350PEQ90W 350PEQ60W 350PEQ110W 350PEQ100 |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
|
International Rectifier
|
| NTE5406 NTE5400 NTE5401 NTE5402 NTE5403 NTE5404 NT |
0.8 A, 200 V, SCR, TO-92
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate
|
NTE[NTE Electronics]
|
| 2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92
Silicon Controlled Rectifier .8A 25V
Thyristor .8A 200V
Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
| 350PJT160 350PJT100 350PJT140 350PJT 350PJT120 |
V(rrm/drm): 1000V; 1200A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1600V; 1200A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1200V; 1200A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1400V; 1200A I(tgq) gate turn-off hockey puk SCR
1200A ITGQ Gate Turn-Off Hockey Puk SCRs
|
IRF[International Rectifier]
|
| FG4000BX-90DA FG4000BX90DA |
1600 A, 4500 V, GATE TURN-OFF SCR
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
http://
|
| AS7C3256AA AS7C3256A AS7C3256A-20TIN AS7C3256A-10J |
Quadruple D-Type Flip-Flops With Clear 16-TSSOP -40 to 85
Dual 4-Input Positive-NAND Gate 14-TSSOP -40 to 85 32K X 8 STANDARD SRAM, 20 ns, PDSO28
IC,AS7C3256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,3.3V 32K X 8 STANDARD SRAM, 10 ns, PDSO28
3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 10 ns, PDSO28
Dual 4-Input Positive-NAND Gate 14-SOIC -40 to 85 32K X 8 STANDARD SRAM, 12 ns, PDSO28
Dual 4-Input Positive-NAND Gate 14-TVSOP -40 to 85
Dual 4-Input Positive-NAND Gate 14-SSOP -40 to 85
SRAM - 3.3V Fast Asynchronous
|
ALLIANCE MEMORY INC
Alliance Memory, Inc.
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
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