| PART |
Description |
Maker |
| DL3149-070 |
Laser Diode, 5mW Power, 685nm Wave Length, 40mA Current
|
Sanyo Semiconductor
|
| DL3148-011 |
Laser Diode, 5mW Power, 640nm Wave Length, 40mA Current
|
Sanyo Semiconductor
|
| SLD322XT-3 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT |
0.5W High Power Laser Diode .5W高功率激光二极管
High Power Density 0.5W Laser Diode(0.5W大功率密度激光二极管)
|
Sony, Corp.
SONY[Sony Corporation]
|
| NDL7603PC NDL7603P NDL7603P1C NDL7603P1D NDL7603P2 |
1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE 1 310纳米光纤通信InGaAsP多量子阱激光器激光二极管同轴模块
Opical Fiber Communications Laser Diode(光纤通信激光二极管)
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NX8369TS |
LASER DIODE 1 625 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| 1A440 |
VCSEL(Vertical Cavity Surface-Emitting) Laser Diode(用于光纤通道，吉位以太网，ATM的垂直空腔表面辐射激光二极管) VCSEL（垂直腔表面发射）激光二极管（用于光纤通道，吉位以太网，自动取款机的垂直空腔表面辐射激光二极管
VCSEL Laser Diode(Datacom General Purpose)
VCSEL Laser Diode(Datacom/ General Purpose)
VCSEL Laser Diode(Datacom, General Purpose) VCSEL激光二极管（数据通信，通用
|
Mitel Networks Corporat...
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
