| PART |
Description |
Maker |
| 200HFR80PV 200HF 200HF120MSV 200HF120MV 200HF120PB |
From old datasheet system
STANDARD RECOVERY DIODES Stud Version
800V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
400V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
1200V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
|
IRF[International Rectifier]
|
| ST180S12P0 ST180S12P0V ST180S12P1 ST180S12P1V ST18 |
From old datasheet system
PHASE CONTROL THYRISTORS
1800V 200A Phase Control SCR in a TO-209AB (TO-93C) package
1200V 200A Phase Control SCR in a TO-209AB (TO-93) package
1600V 200A Phase Control SCR in a TO-209AB (TO-93C) package
2000V 200A Phase Control SCR in a TO-209AB (TO-93C) package
|
IRF[International Rectifier]
|
| IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培2V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培4V电压，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培2V的，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
| 201CNQ045 201CNQ 201CNQ035 201CNQ040 |
SCHOTTKY RECTIFIER
35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
IRF[International Rectifier]
|
| 201CNQ020 201CNQ030 200CNQ030 |
V(rwm): 20V; 200A schottky center tap rectifier module
V(rwm): 30V; 200A schottky center tap rectifier module
|
International Rectifier
|
| PCHMB200A61 |
200A 600V
|
Nihon Inter Electronics Corporation
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 30PRA20 |
FRD - 3A 200A 90ns
|
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| MTPT200 |
Three-Phase Bridge Thyristor, 200A
|
Nell Semiconductor Co., Ltd
|
| 7MBP200RA060 |
IGBT-IPM(600V/200A)
|
Fuji Electric
|
| PD20116 |
DIODE MODULE - 200A/1600V
|
Nihon Inter Electronics Corporation
|
