| PART |
Description |
Maker |
| IRKHF200-02GP IRKKF200-06HP IRKHF200-06GP IRKHF200 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|600V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|400V V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|200V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|800V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CA|400V V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|200V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 800V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1.2KV五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.2KV五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR|DUAL|CC|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|消委会| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1KV交五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|200V V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 800V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CA|1KV V(RRM)|200A I(T)
|
Microchip Technology, Inc.
STMicroelectronics N.V.
IXYS, Corp.
Glenair, Inc.
L-com, Inc.
Powerex, Inc.
|
| 2MBI200-120-01 2MBI200NB-120-01 |
1200V / 200A 2 in one-package
1200V / 200A 2 in one-package 1200 200安培在一2级封
IGBT module
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 203DNQ100 203DNQ080 |
100V 200A Schottky DOUBLER Diode in a TO-244AB Non-Isolated package
80V 200A Schottky DOUBLER Diode in a TO-244AB Non-Isolated package
From old datasheet system
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| 201CNQ045 201CNQ 201CNQ035 201CNQ040 |
SCHOTTKY RECTIFIER
35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
IRF[International Rectifier]
|
| 209CNQ150 209CNQ 209CNQ135 |
SCHOTTKY RECTIFIER 肖特基整流器
135V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
150V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| CMBA857E CMBA857F |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
|
Continental Device India Limited
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| NF4000C-TT NF4100C-TT NF4050C-TT |
Large current(50 up to 200A)
|
Soshin
|
| PT200S8 |
DIODE MODULE 200A/800V
|
Nihon Inter Electronics Corporation
|
| PDH20116 |
THYRISTOR MODULE 200A / 1600V
|
Nihon Inter Electronics Corporation
|
| PAT PAH PCH2008 PDH PDT2008 PDT20081 |
200A Avg 800 Volts
|
Nihon Inter Electronics Corporation
Nihon Inter Electronics...
|
