| PART |
Description |
Maker |
| PM39LV010 PM39LV512-70JCE PM39LV010-70VC PM39LV010 |
(PM39LV010 - PM39LV512) 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
|
PMC-Sierra, Inc.
|
| K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
| K8D1716UBC-DC07 K8D1716UBC-DC08 K8D1716UBC-DI07 K8 |
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
|
http://
|
| MB84VD22398EJ-90 MB84VD22398EJ-85 MB84VD2239XEJ-85 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM
2-Stacked MCP
|
SPANSION[SPANSION]
Fujitsu
|
| K8D1716U K8D1716UT K8D1716UB K8D1716UBB-TC07 K8D17 |
16M Dual Bank NOR Flash Memory
16M BIT (2M X8/1M X16) DUAL BANK NOR FLASH MEMORY
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| K4X56163PG-FE K4X56163PG-FG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| IS42S16800E-6BLI IS42S16800E-6TL IS42S81600E IS42S |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| HYM72V1600GS-50 HYM72V1610GS-50 HYM72V1600GS-50- H |
16M x 72-Bit Dynamic RAM Module 16米x 72位动态随机存储器模块
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
|
SIEMENS AG
Siemens Semiconductor Group
|
| MB84VA2107-10 MB84VA2106-10 |
16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
|
Fujitsu
|
| MB84VA2107-10 MB84VA2106 MB84VA2106-10 MB84VA2107 |
16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
