| PART |
Description |
Maker |
| HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
| CM1400DU-24NF |
Mega Power Dual⑩ IGBTMOD 1400 Amperes/1200 Volts
Mega Power Dual IGBTMOD 1400 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| 1214-300M |
300 Watts - 40 Volts, 150楼矛s, 10% Radar 1200 - 1400 MHz
300 Watts - 40 Volts, 150μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1214-220M |
220 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| 1214-300 |
300 W, 50 V, 1200-1400 MHz common base transistor
BJT
|
GHz Technology
|
| CM1400DUC-24NF |
Mega Power Dual IGBTMOD 1400 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| 1214-110M |
110 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| CM1400E3U-24NF |
Mega Power Chopper IGBTMOD 1400 Amperes/1200 Volts
|
Powerex Power Semicondu...
|
| FP-512 |
Wideband RF/Pulse Transformer 1-1200 MHz
|
SIRENZA MICRODEVICES
|
| CGHV14500 CGHV14500F CGHV14500F-AMP CGHV14500F-TB |
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| PTVA123501FCV1R250 |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ?1400 MHz
|
Infineon Technologies A...
|
| CM50TF-28H |
122 x 32 pixel format, LED Backlight available 50 A, 1400 V, N-CHANNEL IGBT
Six-IGBT IGBTMOD 50 Amperes/1400 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
