| PART |
Description |
Maker |
| EM48AM1644LBB-75FE EM48AM1644LBB-7FE EM48AM1644LBB |
128Mb (2M×4Bank×16) Synchronous DRAM
128Mb (2M隆驴4Bank隆驴16) Synchronous DRAM
128Mb (2M】4Bank】16) Synchronous DRAM
|
http://
Eorex Corporation
|
| EM48AM1644VBA-6FE EM48AM1644VBA-75FE EM48AM1644VBA |
128Mb (2M×4Bank×16) Synchronous DRAM
128Mb (2M隆驴4Bank隆驴16) Synchronous DRAM
128Mb (2M】4Bank】16) Synchronous DRAM
|
http://
Eorex Corporation
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| NT5SV8M16FS NT5SV8M16FT |
128Mb Synchronous DRAM
|
NANYA
|
| IS42RM32400E |
128Mb Mobile Synchronous DRAM
|
ISSI
|
| IS42VM16800E IS42VM81600E IS42VM32400E IS45VM16800 |
128Mb Mobile Synchronous DRAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| IS45S16800E-6BLA1 IS45S81600E-6TLA1 IS45S81600E-7C |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc
|
| K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K |
128Mb SDRAM, 3.3V, LVTTL, 100MHz
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| H57V2582GTR-60I H57V2582GTR-60J H57V2582GTR-75I H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
|
Hynix Semiconductor
|
| H57V2562GTR-50I H57V2562GTR-50J H57V2562GTR-60I H5 |
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| HMD16M72D9A-13 HMD16M72D9A-F13 HMD16M72D9A-F12 HMD |
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit），带ECC内存的基础6Mx8BanksK的参考。，3.3
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit），带ECC内存的基础16Mx8BanksK的参考。，3.3
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
