| PART |
Description |
Maker |
| M378B5773CH0 M391B5773CH0 M391B5273CH0 M378B5273CH |
240pin Unbuffered DIMM based on 2Gb C-die
|
Samsung semiconductor
|
| HYS72T256000HR-3.7-A |
256MB - 4GB, 240pin
|
Infineon
|
| HYS72D128320GBR-7-C HYS72D32300GBR-7-C HYS72D64300 |
256MB - 2GB, 184pin
|
Infineon
|
| HYS72D128321GBR-5-B |
256MB - 2GB, 184pin
|
Infineon
|
| HYS64T128020HDL-3.7-A HYS64T128020HDL-5-A |
256MB - 2GB, 200pin
|
Infineon
|
| M393T6453FZA-D5 M393T3253FG M393T3253FG0-CC M393T3 |
CONNECTOR ACCESSORY
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC 注册的DDR2 SDRAM内存模块240针脚注册模块，基56Mb的F -2位ECC
40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 注册的DDR2 SDRAM内存模块240针脚注册模块，基56Mb的F -2位ECC
|
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| WV3EG216M64STSU335D4NG |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
| M392B5673GB0 |
240pin VLP Registered DIMM
|
Samsung
|
