| PART |
Description |
Maker |
| DM2223T-15 DM2233T-15 DM2233T-15I DM2223T-15I |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
L-com, Inc.
|
| DM2240J2-10 DM2252J2-10 DM2242J2-10 DM2200J-10 DM2 |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
Yageo, Corp.
|
| DM2M36SJ7-12 DM2M36SJ7-12L DM2M36SJ7-15I DM2M36SJ6 |
Enhanced DRAM (EDRAM) Module 增强的DRAM（eDRAM内存）模
|
Infineon Technologies AG
|
| PM9313-HC PM9315-HC PM9315 PM9311 PM9311-UC PM9312 |
Enhanced TT1TM Switch Fabric
ENHANCED TT1⑩ SWITCH FABRIC
ENHANCED TT1 SWITCH FABRIC
|
PMC[PMC-Sierra, Inc]
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| CYM7232 CYM7264 7232SP |
DRAM Accelerator Module(DRAM加速器模块) DRAM CONTROLLER, XMA
From old datasheet system
|
Cypress Semiconductor, Corp.
|
| EL5203ISZ-T13 EL5203IYZ-T13 ELS5102 EL5102 EL5102I |
400MHz Slew Enhanced VFAs
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:35VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Body Diameter:10mm; Body Length:10.2mm RoHS Compliant: No
400MHz Slew Enhanced VFAs 1 CHANNEL, VIDEO AMPLIFIER, PDSO16
400MHz Slew Enhanced VFAs 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
400MHz Slew Enhanced VFAs 1 CHANNEL, VIDEO AMPLIFIER, PDSO5
|
INTERSIL[Intersil Corporation]
音频／视频放
Intersil, Corp.
|
| MT4C4001JC-12IT MT4C4001JC-10883C MT4C4001JC-7883C |
1 meg x 4 DRAM fast page mode DRAM
|
Austin Semiconductor
|
| PEB3314 PEB3318 PEB3324 PEB3328 PEB4266 PEB4264 PE |
Enhanced Solutionsfor Next Generation Analog Telephony
(PEB33xx) Voice and Interbet Enhanced Telephony Interface Circuit
|
Infineon Technologies A...
Infineon Technologies AG
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
