PART |
Description |
Maker |
R1LV0416C-I R1LV0416CSB-5SI R1LV0416CSB-7LI |
Memory>Low Power SRAM Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit) Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
R1LV0416CBG-5SI R1LV0416CBG-7LI R1LV0416CBG-I |
Memory>Low Power SRAM Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit) Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
HM62W16258B HM62W16258BLTT-5 HM62W16258BLTT-5SL HM |
4 M SRAM (256-kword ′ 16-bit) 4 M SRAM (256-kword ? 16-bit)
|
Renesas Electronics Corporation
|
R1LV0414DSB-5SI |
4M SRAM (256-kword 16-bit) 4分的SRAM56 - KWord的6位)
|
Renesas Electronics, Corp.
|
HM62V16256BLTT-8SL HM62V16256BLTT-8 HM62V16256BLTT |
4 M SRAM (256-kword ×16-bit)(4 M 静态RAM(256k字6) 四米的SRAM56 - KWord的16位)个M静态随机存储器56k字16位) From old datasheet system SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
|
Hitachi,Ltd. Hitachi America
|
HM62V16256CLTTI-7 |
Wide Temperature Range Version 4 M SRAM (256-kword ? 16-bit)
|
Renesas Electronics Corporation
|
HM62W16256B HM62W16256BLTT-5 HM62W16256BLTT-5SL HM |
RES 100-OHM 1% 0.25W 100PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA 4 M SRAM (256-kword x 16-bit)
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
R1LV0408DSP-5SI R1LV0408DSA-5SR R1LV0408DSP-5SR |
4M SRAM (512-kword 8-bit) 4分的SRAM12 - KWord的位) 4M SRAM (512-kword ??8-bit)
|
Renesas Electronics, Corp. Renesas Electronics Corporation.
|
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
HM628511HC HM628511HCJP-10 HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit) Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位) 4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位)
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|