| PART |
Description |
Maker |
| M366S6453DTU |
64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs Data Sheet
|
Samsung Electronic
|
| M366S6453CTU |
64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M366S6453BT0 |
64M x 64 SDRAM DIMM based on 32M x 8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| KMM366S1623AT-G8 KMM366S1623AT KMM366S1623AT-G0 KM |
16M x 64 SDRAM DIMM
16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| DSM390S2858CT1 M390S2858CT1 M390S2858CT1-C7A M390S |
SDRAM DIMM SDRAM的内
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M366S3323DTS M366S3323DTS-C1H M366S3323DTS-C1L M36 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung semiconductor
Samsung Electronic
|
| HYMD264646AL8-H HYMD264646AL8-K HYMD264646A8-H HYM |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V3222 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模3.332M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
| M464S6453BK0 |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Datasheet
|
Samsung Electronic
|
| M464S6453DKS |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M366S3323CT0-C1L M366S3323CT0 M366S3323CT0-C1H |
PC100 Unbuffered DIMM
32MB x 64 SDRAM DIMM based on 16MB x 8, 4Banks, 4KB Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
