| PART |
Description |
Maker |
| RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| FZ500R65KE3 |
high insulated module
|
Infineon Technologies AG
|
| FZ500R65KE3T |
high insulated module
|
Infineon Technologies AG
|
| CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FM400TU-3A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| FM600TU-2A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
| UFB120FA20 |
Insulated Ultrafast Rectifier Module
|
IRF[International Rectifier]
|
| UFB130FA20 |
Insulated Ultrafast Rectifier Module, 130 A
|
Vishay Siliconix
|
| UFB200FA40P UFB200FA40P10 |
Insulated Ultrafast Rectifier Module, 200 A
|
Vishay Siliconix
|
| UFB120FA20P10 |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
