PART |
Description |
Maker |
RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门)) TMOS POWER FET 14 AMPERES From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
MRF8S19140HR3 MRF8S19140HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor
|
MRF8S7120NR3 |
RF Power Field Effect Transistor
|
Motorola
|
MRF141 |
RF FIELD-EFFECT POWER TRANSISTOR
|
Advanced Semiconductor
|
MRF8S8260HR3 MRF8S8260HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF8S18260H MRF8S18260HSR6 MRF8S18260HR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|