| PART |
Description |
Maker |
| M464S1724CT1 M464S1724CT1-C1H M464S1724CT1-C1L M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD
|
Samsung semiconductor
|
| M463S1724DN1 |
16Mx64 SDRAM mSODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synch. DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| HY5DV281622DT-5 HY5DV281622DT-36 HY5DV281622DT-33 |
128M(8Mx16) GDDR SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
| HY5DU283222AF-2 HY5DU283222AF-25 HY5DU283222AF-33 |
128M(8Mx16) GDDR SDRAM
128M(4Mx32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| HYE18P32160AC-15 |
Specialty DRAMs - 2Mx16, VFBGA-54; Available 2Q04
|
Infineon
|
| HYE25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| CMS4A16LAF |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
| HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M464S0924BT1 M464S1724BT1SDRAMSODIMM |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| E28F128J3A150 |
IC,EEPROM,NOR FLASH,8MX16/16MX8,CMOS,TSSOP,56PIN,PLASTIC
|
Intel Corp
|
| K1S2816BCM-I K1S2816BCM |
8Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
SAMSUNG[Samsung semiconductor]
|
