PART |
Description |
Maker |
UTCUM68T08 UTCUM68T05 UTCUM68T19 |
128 NOTES DUAL TONE MELODY GENERATOR PWM OUTPUT DIRECT TO BUZZER AND SPEAKER
|
Unisonic Technologies
|
S29PL-N07 S29PL127N65GFW000 S29PL129N65GFW000 S29P |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 A |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1 PCB COPPER CLAD 6X9 1/32 2-SIDE DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修 M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
HM538123BJ-10 HM538123BJ-6 HM538123BJ-8 |
100ns; V(cc): -0.5 to 7.0V; 1M VRAM (128 -kword x 8-bit) 60ns; V(cc): -0.5 to 7.0V; 1M VRAM (128 -kword x 8-bit) 80ns; V(cc): -0.5 to 7.0V; 1M VRAM (128 -kword x 8-bit)
|
Hitachi Semiconductor
|
AM27X010 AM27X010-120JC AM27X010-120JI AM27X010-12 |
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 250 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 55 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 120 ns, PDIP32 CABLE TIE BARB TY 120LB 18.1,1
|
PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices] ADVANCED MICRO DEVICES INC
|
MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory 128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MC-4R256FKK8K-840 MC-4R256FKK8K |
256MB 32-bit Direct Rambus DRAM RIMM Module 256MB2位直接Rambus的内存RIMM的模 256MB 32-bit Direct Rambus DRAM RIMM Module 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
BR9016AF-W BR9016ARFVM-W BR9016ARFV-W BR9080ARFV B |
8k/ 16k bit EEPROMs for direct connection to serial ports 8k 16k bit EEPROMs for direct connection to serial ports 8k, 16k bit EEPROMs for direct connection to serial ports 分为8K6K,可直接连接到串行端口位的EEPROM 512 X 16 4-WIRE SERIAL EEPROM, PDSO8 1K X 16 4-WIRE SERIAL EEPROM, PDSO8
|
ROHM[Rohm] Rohm Co., Ltd.
|
PCA8581C PCA8581 PCA8581T PCA8581CP PCA8581CT PCA8 |
128 X 8-bit EEPROM with I 2 C-bus 128 x 8-bit EEPROM with I2C-bus interface
|
PHILIPS[Philips Semiconductors]
|
LPC236110 |
Single-chip 16-bit/32-bit MCU; up to 128 kB flash with ISP/IAP, Ethernet, USB 2.0 device/host/OTG, CAN, and 10-bit ADC/DAC
|
NXP Semiconductors
|
EBR51UC8ABKD-8C EBR51UC8ABKD-AD EBR51UC8ABKD-AE EB |
512MB 32-bit Direct Rambus DRAM RIMM垄芒 Module 512MB 32-bit Direct Rambus DRAM RIMM Module 512MB 32-bit Direct Rambus DRAM RIMM?/a> Module
|
Elpida Memory
|