| PART |
Description |
Maker |
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| T436432B-5S T436432B-55S |
2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M52D32321A-10BG M52D32321A-7.5BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| K4M283233H K4M283233H-FG60 K4M283233H-FG75 K4M2832 |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Samsung semiconductor
|
| K4S283233F-M |
1M x 32Bit x 4 Banks SDRAM in 90 FBGA Data Sheet
|
Samsung Electronic
|
| W986432AH-55 WINBONDELECTRONICSCORP-W986432AH-6 |
512K x 4 BANKS x 32 BITS SDRAM
x32 SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| K4M563233E-N K4M563233E K4M563233E-C K4M563233E-E |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323L |
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W981616BH |
SDRAM 1Mx16
512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|
| W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM
512K x 4 BANKS x 32 BITS SDRAM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
| K4S64323LH-HN75 K4S64323LH K4S64323LH-FC1H K4S6432 |
2M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
Dual Rail-To-Rail Micropower Operational Amplifier 8-PDIP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-TSSOP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 12k × 32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
