| PART |
Description |
Maker |
| X28VC256S-70 X28VC256TMB-90 X28VC256 X28VC256D-45 |
5 Volt/ Byte Alterable E2PROM
5 Volt, Byte Alterable E2PROM
|
XICOR[Xicor Inc.]
|
| XM28C020 XM28C020-12 XM28C020-15 XM28C020-20 XM28C |
5 Volt, Byte Alterable E2PROM
|
XICOR[Xicor Inc.]
|
| X28C010 X28C010D-12 X28C010D-15 X28C010D-20 X28C01 |
5 Volt, Byte Alterable E2PROM
5 Volt/ Byte Alterable E2PROM
|
XICOR[Xicor Inc.]
|
| X28C010NI-20 X28C010NI-25 X28C010RI-12 X28C010RI-1 |
5 Volt, Byte Alterable E2PROM
5 Volt/ Byte Alterable E2PROM
|
http://
Xicor Inc.
|
| X28VC256S-45 X28VC256S-90 X28VC256PI-45 X28VC256E- |
5 Volt, Byte Alterable E2PROM 5伏，可变E2PROM的字
|
Electronics Industry Public Company Limited
BRILLIANCE SEMICONDUCTOR, Inc.
Intersil, Corp.
STMicroelectronics N.V.
http://
Xicor Inc.
|
| X28HC64JIZ-90 X28HC64SZ-70 |
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 70 ns, PDSO28
|
Intersil, Corp.
|
| X28HC256DMB-12 X28HC256DM-12 X28HC256SM-15 X28HC25 |
5 Volt, Byte Alterable EEPROM
|
INTERSIL[Intersil Corporation]
|
| XM28C040PM-25 XM28C040P XM28C040P-15 XM28C040P-20 |
High Density 5 Volt Byte Alterable Nonvolatile Memory Array 高密5伏可变字节非易失性存储器阵列
|
XICOR[Xicor Inc.]
|
| X28HC25607 X28HC256DM-12 X28HC256KM-90 X28HC256JIZ |
5V, Byte Alterable EEPROM
|
Intersil Corporation
http://
|
| X28C513JZ-12 X28C513JZ-15 X28C513EMB-12 X28C513EMB |
5V, Byte Alterable EEPROM
|
Renesas Electronics Corporation
|
| ATTINY13 |
1-Kbyte In-System programmable Flash Program Memory, 64-Byte SRAM, 64-Byte EEPROM, 32-Byte Register File, 4-channel 10-bit A/D, Up to 16 MIPS throughput at 16 MHz, 5 Volts. 1.8 - 5.5 Volt Operation.
|
Atmel
|
| AT49BV163A AT49BV163T |
16M bit, 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash, Single Pane, Bottom Boot
|
Atmel
|
