| PART |
Description |
Maker |
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| 29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MR2A16ACYS35 MR2A16AVTS35C MR2A16ACTS35C MR0A16AVY |
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 256K x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司
椋???″????浣?涓??)??????
|
| KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q671 |
256k x 16 Bit FPM DRAM 5 V 60 ns
256k x 16 Bit FPM DRAM 5 V 50 ns
256k x 16-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM)
CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器（的CMOS 256K × 16位快速页面存取模式动态内存）
CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| EN29F002 EN29F002N EN29F002T-70J EN29F002T-90TI EN |
2 Megabit (256K x 8-bit) Flash Memory
2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V -10% for both read/write operation. With RESET function.
|
Eon Silicon Solution
N.A.
ETC[ETC]
|
| PDM41257SA7SOTY PDM41257SA7SOTR PDM41257LA7SOTY PD |
256K static RAM 256K x 1-bit
x1 SRAM
|
PARADIGM
|
| MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM
Macronix International Co., Ltd.
|
| K3N3C6000D-DC K3N3C6000D-DC10 |
256K X 16 MASK PROM, 100 ns, PDIP40
4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet
|
Samsung Electronic
|
