PART |
Description |
Maker |
DM2203TME-15 |
Enhanced DRAM (EDRAM) 增强的DRAM(eDRAM内存
|
BCD Semiconductor Manufacturing, Ltd.
|
DM2242J2-12L DM2242J2-12I DM2252J2-12L DM2252J2-12 |
Enhanced DRAM (EDRAM) 增强的DRAM(eDRAM内存
|
Linear Technology, Corp.
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
EP7312-CV EP731205 EP7312-CB-90 EP7312-IV-90 EP731 |
High-performance, Low-power, System-on-chip with SDRAM & Enhanced with SDRAM & Enhanced IC ARM720T MCU 74MHZ 208-LQFP 32-BIT, FLASH, 74 MHz, RISC MICROCONTROLLER, PQFP208
|
Cirrus Logic, Inc.
|
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 100PF50V_5%_NPO_,SM0603 CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
GM71C16163CCL GM71S16163CCL GM71CS16400CLJ-6 GM71C |
1Mx16|5V|4K|5/6|FP/EDO DRAM - 16M x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Electronic Theatre Controls, Inc. Rochester Electronics, LLC Integrated Silicon Solution, Inc.
|
HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66 DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66 512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
MC68160A MC68160AFB |
MC68160A Enhanced Ethernet Transceiver ENHANCED ETHERNET INTERFACE TRANSCEIVER MC68160A Enhanced Ethernet Transceiver From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7 |
128Mb (2MBank16) Synchronous DRAM 128Mb (2MBank6) Synchronous DRAM 128Mb的(200万Bank6)同步DRAM 128Mb (2M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
EL5300IUZT13 EL5100 EL5100IS EL5101IC-T7 EL5101IW- |
200MHz Slew Enhanced VFA 200MHz Slew Enhanced VFA 200MHz的回转增强挥发性脂肪酸 200MHz Slew Enhanced VFA 1 CHANNEL, VIDEO AMPLIFIER, PDSO16 200MHz Slew Enhanced VFA 1 CHANNEL, VIDEO AMPLIFIER, PDSO5 200MHz Slew Enhanced VFA 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
|
http:// INTERSIL[Intersil Corporation] Intersil, Corp.
|